2N7002_08 [BL Galaxy Electrical]
Small Signal MOSFET Transistor; 小信号MOSFET晶体管
| 型号： | 2N7002_08 |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | Small Signal MOSFET Transistor |
| 文件： | 总4页 (文件大小：216K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BL Galaxy Electrical
Production specification
Small Signal MOSFET Transistor
2N7002
FEATURES
z
High Density Cell Design For Low
RDS(ON)。
Pb
z
z
z
Voltage Controlled Small Switch.
Rugged and Reliable.
Lead-free
High Saturation Current Capability.
APPLICATIONS
z
N-channel enhancement mode effect transistor.
z
Switching application.
SOT-23
ORDERING INFORMATION
Type No.
2N7002
Marking
3P
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
VDSS
Drain-Source voltage
Drain-Gate voltage(RGS≤1MΩ)
60
60
V
V
VDGR
Gate -Source voltage
- continuous
±20
±40
115
VGSS
ID
V
-Non Repetitive (tp<50μs)
Maximum Drain current
Power Dissipation
-continuous
-Pulsed
mA
800
PD
200
625
mW
RθJA
Thermal resistance,Junction-to-Ambient
Junction and Storage Temperature
℃/W
TJ, Tstg
-55-150
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSMTC008
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
Small Signal MOSFET Transistor
2N7002
Parameter
Symbol Test conditions
MIN
60
1
TYP MAX UNIT
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=10μA
V
Gate Threshold Voltage
Gate-body Leakage
VGS(th)
IGSS
VDS=VGS, ID=250μA
2.1
2.5
Forward
Reverse
VDS=0V, VGS=20V
VDS=0V, VGS=-20V
100
nA
-100
VDS=60V, VGS=0V
1
Zero Gate Voltage Drain Current
IDSS
μA
VDS=60V,VGS=0V,Tj=125℃
500
On-state Drain Current
Drain-Source on-voltage
Forward transconductance
ID(On)
VDS(ON)
gFS
V =10V, V ≥2.0V
500 2700
mA
V
S
D
GS
DS(ON)
VGS=10V,ID=500mA
VGS=5V,ID=50mA
0.6
3.75
1.5
0.09
V ≥2.0VDS(ON),ID=200mA
80
320
mS
S
D
VGS=10V,ID=500mA
1.2
1.7
1.7
2.4
7.5
13.5
7.5
VGS=10V,ID=500mA,Tj=100℃
VGS=5.0V,ID=50mA
Static drain-Source on-resistance RDS(ON)
Ω
V
VGS=5.0V,ID=50mA, Tj=100℃
13.5
Drain-Source diode forward
VSD
VGS=0V,ID=115mA
0.88
1.5
voltage
Input capacitance
CISS
20
11
4
50
25
5
VDS=25V,VGS=0V,f=1.0MHz
pF
Output capacitance
COSS
CRSS
tD(ON)
Reverse transfer capacitance
Turn-On Delay Time
VDD = 30V, ID= 0.2A,
20
ns
ns
RL = 150Ω, VGS= 10V,
Turn-Off Delay Time
tD(OFF)
20
RGEN= 25Ω
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSMTC008
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
Small Signal MOSFET Transistor
2N7002
Document number: BL/SSMTC008
Rev.A
www.galaxycn.com
3
BL Galaxy Electrical
Production specification
Small Signal MOSFET Transistor
2N7002
PACKAGE OUTLINE
Plastic surface mounted package
SOT-23
SOT-23
Dim
A
Min
2.85
1.25
Max
2.95
1.35
B
C
D
E
1.0Typical
0.37
0.35
1.85
0.02
0.43
0.48
1.95
0.1
G
H
J
0.1Typical
K
2.35
2.45
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
PACKAGE INFORMATION
Device
Package
SOT-23
Shipping
2N7002
3000/Tape&Reel
Document number: BL/SSMTC008
Rev.A
www.galaxycn.com
4
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